UC Riverside

Heat is the natural by-product of energy conversion processes. Of the 4.25 × 1020 J of energy the United States consumes every year, more than 60% is wasted in the form of heat. Therefore, waste heat recovery is a crucial step to improve the energy generation and utilization efficiency. Thermoelectric (TE) materials, which can directly convert rejected or waste heat into usable electric power, has been extensively developed for this issue. Thick-film-based devices have advantages over conventional TE module because of its compact size. By shrinking the size of thermoelectric devices, it not only allows the device to operate under smaller temperature gradients, but by so doing it expands its capability to handle a wider range of thermal and power management microelectronic systems. The combination of electrochemical deposition of compound semiconductors (metal tellurides) with standard integrated circuit technique makes fabrication of thermoelectric microdevices possible.

The overall objective of this work is to develop new baths to achieve high-rate electrodeposition of Te and PbTe thick films. The electrodeposition mechanisms of Te and PbTe were examined by electrochemical analysis method. Furthermore, the thermoelectric property of thick PbTe films were optimized by introducing energy barriers from crystal grain boundary and tellurium nanoinclusion, which was achieved by tailoring composition and crystal structures of the thick PbTe films. Additionally, control over the composition and crystal structures was realized by tuning the electrodeposition conditions, as well as post-annealing process.