UC Santa Barbara

The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased and saturated with the GaN cap layer thickness. A relatively close fit was achieved between the measured data and two-dimensional electron gas densities predicted from simulations of the band diagrams. The simulations also indicated the presence of a two-dimensional hole gas at the upper interface of GaN/AlGaN/GaN structures with sufficiently thick GaN cap layers. A surface Fermi-level pinning position of 1.7 eV for AlGaN and 0.9-1.0 eV for GaN, and an interface polarization charge density of 1.6x10(13)-1.7x10(13) cm(-2), were extracted from the simulations. (C) 2003 American Institute of Physics.