UCLA

The carbon nanotube has long been seen as a next-generation semiconductor due to its 1D nanostructure and superior electrical properties. However, the characterization of it remains a challenge due to its ultra small diameter. It is suggested that a combination of theoretical simulations and experimental characterization would be suitable to reduce the time and effort needed to probe the properties of the defect of it. In this thesis, both finite element simulation and multiple characterization techniques, namely Raman Spectroscopy, Raman Imaging, Scanning Electron Microscopy and Atomic Force Microscopy, are performed to probe the effect of misalignment on the properties of deposited carbon nanotubes.

The result of finite element simulation shows that the misalignment of nanotubes would lead to a drop in the total current flow through the device and a concentration of electrical current on a single nanotube. Experiments are then set up to probe a way of characterizing this defect. The diameter and bandgap of the carbon nanotube obtained from characterization is also used in the simulation. It is revealed that computer simulation and characterization results could be combined.