UC Berkeley

This dissertation presents a growth and characterization study of MoS2 thin films

deposited by pulsed laser deposition, with specific interest in demonstrating precise

thickness control down to a single monolayer and high film uniformity over large

areas (0.25 cm2). Limits to traditional methods for scaling field effect based switching

devices have necessitated the development of alternative device architectures.

Devices utilizing two-dimensional materials such as MoS2 have demonstrated

improved electrostatic integrity at small scales while tunneling field effect transistors

have demonstrated a pathway toward reduced power consumption. However,

drawbacks to previously explored synthesis techniques have limited the applicability

of MoS2 for these applications. Toward this goal, the work presented establishes

repeatable growth conditions to fabricate highly crystalline and uniform MoS2 thin

films over technologically significant dimensions and establishes the efficacy of pulsed

laser deposition as a suitable synthesis technique. Films grown herein are found to be

P-type with significant defect densities suggesting avenues for future research.