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Nonlithographic epitaxial SnxGe1−x dense nanowire arrays grown on Ge(001)
Abstract
Nonlithographic epitaxial SnxGe1-x dense nanowire arrays which are grown on Ge(001) was discussed. Molecular beam epitaxy and scanning transmission electron microscopy were used. Results showed a decrease in the energy band gap and in direct energy band gap at lower average Sn compositions.
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