UC Berkeley

We present a massively parallel, 3D phase-field simulation framework for modeling ferroelectric materials based scalable logic devices. This code package, FerroX, self-consistently solves the time-dependent Ginzburg Landau (TDGL) equation for ferroelectric polarization, Poisson's equation for electric potential, and charge equation for carrier densities in semiconductor regions. The algorithm is implemented using the AMReX software framework [1], which provides effective scalability on manycore and GPU-based supercomputing architectures. We demonstrate the performance of the algorithm with excellent scaling results on NERSC multicore and GPU systems, with a significant (15×) speedup on the GPU using a node-by-node comparison. We further demonstrate the applicability of the code in simulations of ferroelectric domain-wall induced negative capacitance (NC) effect in Metal-Ferroelectric-Insulator-Metal (MFIM) and Metal-Ferroelectric-Insulator-Semiconductor-Metal (MFISM) devices. The charge (Q) v.s. voltage (V) responses for these 3D structures clearly indicate stabilized negative capacitance with multidomain formation, which is corroborated by amplification of the voltage at the interface between the ferroelectric and dielectric layers.